Date: 20/12/2012

LDO regulator IC fabricated using micro CMOS process

Toshiba launched 300mA output single LDO regulators that use a newly developed micro CMOS process to significantly improve drop-out characteristics. With an ultra-small 1.0mm × 1.0mm × 0.6mm DFN4 package, the new TCR3DM series achieves 140mV (typ.) at 3.0V and 300mA. The new regulators also include a high-speed load transient response circuit and low-noise circuit. In addition to basic functions, that include over-current protection, over-temperature protection and output auto-discharge, these 300mA output LDO regulators limit inrush current and are recommended for a wide range of applications, particularly mobile devices.

dfn4


Samples are available now with mass production scheduled to start from March 2013.

Applications: Smartphones, mobile phones, tablets, laptop PCs, digital cameras, digital video cameras and other small mobile devices.

Key Features
1. Low drop-out voltage
VIN-VOUT = 140mV (typ.) at 3.0V output, IOUT = 300mA
2. Low output noise voltage
VNO = 38µVrms (typ.) at 2.5V output, IOUT = 10mA, 10 Hz < f < 100kHz
3. The voltage-clamp type output voltage can be set between 1.0V and 4.5V in increments of 50mV.
4. Low bias current (IB=65µA (typ.) at IOUT=0mA)
5. Excellent load transient response characteristics
?VOUT = ±80mV (typ.) at IOUT = 1 ? 300mA, COUT =1.0µF
6. Over-current protection
7. Over-temperature protection
8. Inrush current limit
9. Output auto-discharge
10. Pull-down control terminal connection

Follow this link for more on this product.
http://www.semicon.toshiba.co.jp/eng/product/linear/selection/topics/1267632_2398.html