Date: 13/05/2012

GaN on Silicon LED chip emitting 614mW in a space of 1.1mm square

In a joint collaborative effort Bridgelux and Toshiba have achieved the industry's top class 8" GaN on Silicon LED chip emitting 614mW, <3.1V@350mA with 1.1mm square chip. The LED chips are used in LCD display panels and lighting systems.

Toshiba has also made an equity investment in Bridgelux to develop GaN-on-Silicon LED chip.

"Toshiba and Bridgelux have already been engaged in the development of the technology, and the equity investment brings both companies one step closer to a more strategic relationship and achieving our shared goal of driving down the cost of Solid State solutions for the general lighting market," said Bill Watkins, Bridgelux Chief Executive Officer.

"We are pleased to achieve the best-reported 8" GaN-on-Silicon LED performance through our joint development activities with Bridgelux. We will continue to pursue more advanced development targeting commercialization of the technology " said Makoto Hideshima, Executive Vice President of Semiconductor and Storage Products Company, Corporate Vice President of Toshiba.