Date: 04/04/2012

UMC certified Synopsys' StarRC extraction solution for 28-nm designs

Synopsys has announced that UMC has certified Synopsys' StarRC parasitic extraction solution for its latest 28-nanometer (nm) process technologies. The StarRC solution delivers silicon-validated accuracy on UMC's evaluation designs to meet the qualification criteria for its advanced 28-nm Poly SiON and High K/Metal gate processes. The UMC customers working with 28-nm processes can use this StarRC technology files immediately.

As per S. C. Chien, vice president of Customer Engineering & IP Development Design Support Divisions at UMC, "The qualification of Synopsys' proven StarRC parasitic extraction solution for our 28-nanometer process technology strengthens the portfolio of resources available to our customers for 28-nanometer designs. Mutual customers can now take full advantage of the latest foundry processes and successfully bring their innovations to the marketplace".

Features of StarRC 28-nm
Modeling for key parasitic effects, including advanced retargeting effects, new via etch and coupling effects, area-dependent via resistance and capacitance, polynomial-based diffusion resistance, enhanced layout-dependent device parasitic extraction, other advanced capabilities for 28-nm designs, including unified Rapid3D technology for fast, high-accuracy 3D extraction, enhanced multicore performance and scalability, proprietary reduction capabilities and the smallest netlist for signoff of the largest SoC designs.

StarRC is a key component of Synopsys' Galaxy Implementation Platform and the parasitic extraction solution for system-on-chip, custom digital, analog/mixed-signal and memory designs.