Date: 06/12/2011

Forum on 6th December covering 3D semiconductor packaging tech

Applied Materials, Inc. has announced it will host an important forum on December 6, 2011, in Washington, D.C., to explore the semiconductor memory technologies that will enable future generations of mobile computing - from smartphones and tablets to advanced cloud servers. Critical topics for discussion will include: advanced DRAM and SRAM technologies, emerging memory types such as spin torque transfer RAM (STT RAM) or resistive RAM (RRAM), and advanced 3-D packaging.

The forum, titled "How will RAM Change for the Mobile Computing Era?" will be moderated by Professor Yoshio Nishi, professor of electrical engineering at Stanford University. To register for this exciting event, please visit: http://www.appliedmaterials.com/events/iedm-2011. Panel: Dr. Narbeh Derhacobian - president and CEO, Adesto Technologies, Corp.
Dr. Gyoyoung Jin - senior vice president, Samsung Microelectronics, Ltd.
Dr. Jae-Sung Roh - research fellow, Hynix Semiconductor, Inc.
Dr. Gurtej Sandhu - senior fellow, Micron Technology, Inc.
Dr. Klaus Schuegraf - chief technology officer, Applied Materials, Inc.
Dr. Geoffrey Yeap - vice president of technology, Qualcomm, Inc.

Where: Dupont Circle Hotel
1500 New Hampshire Avenue NW, Washington, DC 20036

When: Tuesday, December 6, 2011

Schedule: 5:15pm - 6:15pm Registration and Reception
6:15pm - 7:30pm Panel Discussion
7:30pm - 8:00pm Beverages/Social