Date: 02/09/2011
CMOS transmit modules from Amalfi Semiconductor for front-end GSM/GPRS cellular handsets
Amalfi Semiconductor has made available of the economical and high-performance CMOS-based transmit modules for front-end GSM/GPRS cellular handsets, leveraging the inherent scalability of bulk CMOS processes, the AdaptiveRF architecture can incorporate highly integrated derivative functions including switches and complex filters, allowing a significant ongoing reduction in front-end costs, size and power consumption.
"Moblie phone manufacturers are under extreme price pressure, and yet need to maintain high performance and long talk time," stated Mark Foley, Amalfi CEO. "Amalfi's CMOS architecture offers the most aggressive integration and price-down roadmap while delivering the highest power efficiency and overall performance. In turn, enabling our customers to offer lower cost handset solutions with superior performance and extended talk time."
Amalfi explains that the family of dual- and quad-band GSM/GPRS transmit modules uses a standard CMOS process and proprietary architecture that consistently outperform competing technology in performance, integration and cost and the modules are targeted primarily at the high growth entry and ultra-low-cost (ULC) product segments in the emerging BRIC markets.
Mobile phone power amplifiers typically use between one-third and 3.5 watts of power during cellular transmission, which represents 30 to 70 percent of the electrical current used by the phone when the user is talking. The lower current consumption resulting from it's CMOS-based transmit module enables the cell phone to support longer talk time compared to existing solutions, says Amalfi.
The architecture integrates the power amplifier, controller, transmit and receive switch, filtering and all matching components in a space saving 28 mm2 package resulting in lesser bom cost.
Amalfi says its second-generation, CMOS-based transmit modules achieve industry leading peak performance and much better PAE in the typical operation ranges relative to leading GaAs power amplifiers, which allows the transmit module to achieve high efficiency over a broad output power range. In operation, where output power is dynamic and subject to non-ideal loads, these improvements result in a talk time increase of up to 40 percent, claims Amafi.
The modules can withstand 2kV ESD on all pins, including RF pins and the devices are also capable of withstanding 8kV ESD on the antenna port.
Second-Generation CMOS Transmit Module Family
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AM7805 AM7806 AM7807 AM7808
Transmit (Tx) Bands
GSM850
PCS1900
GSM900
DCS1800
GSM850
GSM900
DCS1800
PCS1900
GSM850
GSM900
DCS1800
PCS1900
Receive (Rx) Ports 2 Ports 2 Ports 4 Ports 2 Ports
Low Band PAE @ 33dBm
High Band PAE @ 30dBm
45%
39%
47%
40%
46%
40%
46%
40%
Module Size (mm) 5.25 x 5.3 5.25 x 5.3 5.25 x 5.635 5.25 x 5.3
ESD (Human Body Model) 2kV / 8kV* 2kV / 8kV* 2kV / 8kV* 2kV / 8kV*
Mass Production Date NOW NOW NOW NOW
The entire family of transmit modules are fully qualified for mass production and are available with standard leadtimes.