Date: 17/07/2011

Toshiba opens new 300mm fab in Japan to make 24nm NAND flash chips

Toshiba Corporation and SanDisk Corporation have opened new semiconductor fab called Fab 5, Toshiba's third 300mm wafer NAND fabrication facility at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

Toshiba has started the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer (nm) process technology and its first wafer outs will be in August. This fab will move to next node of 19nm.

Fab 5 is protected to withstand earthquake, it has earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions. By using LED lighting and low energy consuming semiconductor manufacturing equipment, Fab 5 to cut CO2 emissions by 12 percent compared to Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.

Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the fab.

Outline of Fab 5 at Yokkaichi OperationsStructure of building: 2-Story steel frame concrete, five floors
Building area: Approximately 38,000m2
Floor area: Approximately 187,000m2
Start of construction: July 2010
Building completion: March 2011
Start of volume production: July 2011