Date: 13/12/2010

Paper on compound semiconductor based QWFETs for low power logic by intel and IQE

Intel Corporation and IQE presented a joint paper on the development of InGaAs Quantum Well Field Effect Transistors (QWFETs) for low power logic applications. The paper was presented by Dr. Marko Radosavljevic from Intel Corporation at the International Electron Devices Meeting (IEDM) held in San Francisco, CA. The paper detailed work carried out by scientists at Intel's Technology and Manufacturing Group in Oregon and IQE's epitaxial growth facility in Bethlehem, Pennsylvania.

The paper, entitled: "Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistors with High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications," reports for the first time, the results of work on InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (LSIDE) of 5nm.

The QWFET devices fabricated by Intel using epitaxial semiconductor wafers produced by IQE, show improved enhancement-mode threshold voltage (VT) and significantly improved electrostatics. The results of this work demonstrate that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications.