Date: 14/07/2010
Toshiba starts builiding Fab 5 facility for making NAND flash chips
Toshiba and SanDisk have signed primary agreements for a joint venture to operate in the Fab 5 facility. The construction of this fabrication facility (fab), Fab 5, at Yokkaichi Operations and its memory production facility in Mie Prefecture has already started and is scheduled for completion in Spring 2011.
Toshiba says that this new Fab facility reflects expectations for increasing demand for NAND flash memory for existing and emerging applications, such as smartphones and solid-state drives.
The fab building will be constructed in two phases, with the pace of investment reflecting market trends. On completion of its second phase, Fab 5 will be comparable to Fab 4, with a ground area of some 38,000m2. The partners have flexibility as to the extent and timing of their respective fab capacity ramps, and the output allocation will be in accordance with the proportionate level of equipment funding. The initial manufacturing process will be the leading-edge 20-nanometer generation, with subsequent generations to follow.
Mr. Kiyoshi Kobayashi, Corporate Senior Vice President of Toshiba Corporation, President and CEO of Semiconductor Company said, "Constructing the new facility assures our ability to respond to continued strong demand in the NAND flash memory market. With our partner SanDisk, we will increase the manufacturing capacity gradually in accordance with market conditions, in a way that further enhances our competitiveness in the memory business."
Dr. Eli Harari, Chairman and Chief Executive Officer, SanDisk said, "Today's agreement builds on a successful ten-year partnership with Toshiba that has led to the development of eight generations of industry-leading multi-level cell NAND flash memory. Customer demand for flash memory continues to grow rapidly, and our investment in Fab 5 will provide us highly cost effective supply, while giving us the flexibility to tailor the rate of capacity expansion to match our demand requirements. Fab 5 represents a strategic commitment to further strengthen our leadership in the fast growing flash markets over the coming decade."
Fab 5 will have a quake-absorbing structure and is designed to impose minimal environmental impacts. This facility will use LED lighting throughout, leading edge energy-saving manufacturing equipment and will also use inverter-controlled pumps for semiconductor production equipment and thus are expected to cut CO2 emissions to a level 12% lower than for Fab 4.
Yokkaichi Operations currently has four NAND flash memory fabs. Toshiba and SanDisk are currently ramping into the unused clean room space in Fab 4, and expect to reach full capacity of Fab 4 by the start of production in Fab 5.
Outline of Fab 5
Structure of building: 2-Story steel frame concrete, five floors
Ground area: Approximately 38,000m2
Total floor area: Approximately 187,000m2
Construction start: July 2010
Completion of first phase: Spring 2011 (Planned)
Outline of Yokkaichi Operations
Location: 800, Yamanoisshiki-cho, Yokkaichi, Mie Prefecture
Established: January 1992
General Manager: Koji Sato
Employees: Approximately 4,300
(as of end of March, 2010, regular employees only for Toshiba)
Site area: Approximately 436,800 m2 (including Fab 5)
Total floor area: Approximately 647,000m2 (including Fab 5)