Date: 29/06/2010

New RF product creation center opened by NXP in USA

NXP has opened the high performance radio frequency (RF) product creation center (PCC) in Billerica, Massachusetts, USA. This NXP facility will focus on the design of RF and Microwave integrated circuits (ICs). It targets applications such as defense & aerospace, Industrial, Scientific and Medical (ISM) satellite receivers and broadband communications.

Some of the facts/highlights of this RF Product Creation Center are:

1. Leverages NXP's unique IP, product portfolio, processes and manufacturing capabilities.
2. With its East Coast location, and close proximity to design teams in France and the Netherlands, the center will strengthen the technical and application support provided to the company's Americas-based customers.
3. NXP's broad RF portfolio spans high-power LDMOS for power amplifiers to the SiGe:C BiCMOS for RF/IF MMICs.
4. Uses CMOS process for high-speed converters.
5. These technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements.

"This new product creation center builds upon NXP's 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications," said John Croteau, senior vice president and general manager of the High Performance RF and Lighting business lines at NXP Semiconductors. "Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A."

"The deep pool of experienced and talented RF designers, the active RF customer base and the closeness to Europe make Boston the ideal location for the new NXP PCC,' said Ian Gresham, general manager Boston PCC, NXP Semiconductors. "The PCC team will endeavour to push the limits of our high performance RF & Microwave products overcoming market challenges through innovation."