Date: 12/05/2010

IQE's 6 Inch semiconductor wafers for making high efficiency solar PV cells

U.K. based IQE plc has developed epitaxial processes for producing high efficiency, triple junction concentrator photovoltaic (CPV) solar cells with comparable results on both 6 inch diameter germanium (Ge) and gallium arsenide (GaAs) semiconductor substrates.

IQE is stepping up its effort in making efficient PV solar cells using non-silicon semiconductor material such as GaAs and Ge. IQE has fabrication capabilities in most of the latest semiconductor materials both in the opto and RF domain. IQE has developed multi-junction solar semiconductor technologies to address the large-scale renewable energy opportunity.

IQE is prominent supplier of GaAs based epiwafer products for making front end ICs in wireless applications such as mobile phone handsets. IQE has semiconductor manufacturing sites in Europe, Asia, and USA.

To reap cost advantage, IQE has enhanced its CPV technology for 6 Inch diameter wafers using its same 4 Inch process.

Dr. Drew Nelson, Group CEO and President said:

"Delivering 6" diameter wafers for CPV applications is an important milestone for IQE and our experience as the world leading outsource manufacturer of GaAs based wafers has enabled us to develop the capability to produce multi-junction solar cells on both GaAs and Ge substrates with comparable results, fully scalable from our well-established 4" process in terms of performance, uniformity, and yield.

"Our 6" CPV wafer products have generated a great deal of interest at both the cell supplier and systems-supplier level, and have demonstrated excellent performance and uniformities on which we will continue to build"