Date: 23/11/2009

Toshiba develops new photoresist tech for 20nm semiconductor fabrication

One of the key technologies required in making chips smaller is the resolution of the photoresist material used as photo mask layer coated over Silicon wafers to define the blocks for getting illuminated by extreme ultraviolet radiation or such high intensity radiation.

Japanese Semiconductor technology expert Toshiba has revealed a new technology it has pioneered in replacing polymer based photo resist materials. Toshiba has developed a high-resolution photoresist (photo-sensitive film) supporting semiconductor fabrication beyond 20nm process technology nodes.

Toshiba says, the new photoresist based on low molecular materials can support <22nm semiconductor process technology and higher wiring densities. It can replace argon fluoride laser exposure apparatus and polymer photoresists, which have difficulties in achieving required resolutions.

The new low molecular material, a derivative of truxene is finer and more durable and can be used in both positive-tone and negative-tone processes to secure precise structuring, Toshiba claims.

Toshiba said it has successfully tested this material both on positive tone process and negative tone process in forming a test pattern in the 20nm-scale generation.

As per International Technology Roadmap for Semiconductors (ITRS), high volume production of 20nm based semiconductor chips is expected to start in 2013.