Date: 28/12/2009

40nm 2-Gigabit DDR3 SDRAM volume production shipment from Elpida

Elpida Memory has begun mass production of 40nm process 2-gigabit DDR3 SDRAMs at its Hiroshima Plant.

The new 2-gigabit DDR3 SDRAM achieves 44% more chips per wafer compared with its 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps.

When compared with 50nm products, Elpida's 2-gigabit DDR3 SDRAM uses about two-thirds less current and supports 1.2V/1.35V operation and DDR3 standard 1.5V, resulting in reduced power consumption of around 50%.

Elpida says, depending on conditions in the DRAM market, it may transfer 40nm process technology to foundry partners ProMOS and Winbond to expand production based on this technology to an even higher level.

For more details visit www.elpida.com