Date: 22/10/2009

New Mobile Memory Initiative with breakthrough power efficiency from Rambus

Rambus has announced its development of new silicon test vehicle that offers breakthrough level of power efficiency through its Mobile Memory Initiative (MMI) innovations.
Rambus' MMI offers high bandwidth at low power to enable advanced applications in next-generation smartphones, netbooks, portable gaming and portable media products. Operating at 4.3Gbps, a memory system using MMI innovations can deliver over 17GB/s of memory bandwidth from a single mobile DRAM device.

"The performance demands of next-generation mobile devices are vastly outstripping the pace of battery technology improvements," said Martin Scott, senior vice president of Research and Technology Development at Rambus. "With the innovations developed through our Mobile Memory Initiative, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency."

Rambus' MMI encompasses key innovations based on its signaling and memory architecture, including low-swing differential signaling, FlexClocking architecture, and advanced power state management. In addition, Rambus' FlexPhase and Microthreading technologies improve the power efficiencies of mobile platforms.