Date: 30/09/2009

Samsung producing 512-Megabit nonvolatile memory PRAM

Samsung has announced the production of its new 512-Megabit nonvolatile memory PRAM.
PRAM is a non-volatile memory technology alternative to flash memory featuring high-performance and low power consumption.

The 512Mb PRAM can erase 64 Kiloword in 80 milliseconds, which is over 10 times faster than NOR flash memory. In data segments of 5 MB, PRAM can erase and rewrite data approximately seven-times faster than NOR flash.

The PRAM combines the speed of RAM for processing functions with the non-volatile characteristics of flash memory for storage.

"We believe PRAM will make a highly significant contribution to the efficiency of mobile phone designs, particularly for multimedia handsets and smartphones," said Sei-Jin Kim, vice president, mobile memory planning and enabling group, Memory Division, Samsung Electronics. "We expect it to become one of our core memory products in the future."

For more details visit www.samsung.com