Date: 22/09/2009

IBM's on-chip DRAM prototype technology achievements

IBM has said it has successfully developed a prototype of the semiconductor industry's smallest, densest and fastest on-chip dynamic memory device in next-generation, 32-nanometer, silicon-on-insulator (SOI) technology that can offer improved speed, power savings and reliability for products ranging from servers to consumer electronics.

Semiconductor technology advancements achieved by IBM by doing this prototype embedded DRAM (eDRAM) are,
Effective use SOI technology
Enhancing the capabilities of 32nm using methods other than geometrical sizing

IBM said, this eDRAM cell is twice as dense as any announced 22nm embedded SRAM cell - including the world's smallest 22-nanometer memory cell announced by IBM in August 2008.

"We are making this 32nm offering available to clients who are ready to benefit from the significant performance and power advantages of this seventh generation of IBM SOI technology," said Gary Patton, vice president for IBM's Semiconductor Research and Development Center. "The industry-leading, dense embedded memory, and our design library agreement with ARM, underscore our ability to provide clients with a market edge and a clear progression path to 32nm and 22nm SOI technology nodes."