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  Date: 16/09/2009

Peregrine Semiconductor records a shipment of 500 million UltraCMOS RFICs

Peregrine Semiconductor has shipped a half-billion number of UltraCMOS RFIC based on UltraCMOS silicon-on-sapphire technology. This technology is a patented variation of silicon-on-insulator (SOI) process that combines silicon CMOS circuitry with a high insulating sapphire substrate, delivers performance advantages over competing processes such as GaAs, SiGe BiCMOS and bulk silicon CMOS in applications where RF performance, low power and high levels of integration are paramount and used in the areas such as linearity, isolation, ESD tolerance, speed and switch settling time.

"With current worldwide sales of approximately 1.3 billion units per year, cellular handsets have become not only technology, business and lifestyle drivers but also a leading contributor to eWaste," stated Jim Cable, president and CEO of Peregrine Semiconductor Corp. "We believe that by providing a performance advantage with our UltraCMOS technology and by offering systems designers an alternative to arsenic-based RFICs, we are doing our part to help
our customers and the environment," he added. Peregrine, which has offices and a sales support network around the world, is also actively developing corporate programs toward the awareness of eWaste and electronics recycling.

For more details visit www.peregrine-semi.com

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