Date: 18/08/2009

Jazz Semiconductor replacing GaAs RF component process with SiGe process

Due to the cost and manufacturing advantage of SiGe based BiCMOS process, Tower Semiconductor's subsidiary, Jazz Semiconductor is replacing its Gallium Arsenide (GaAs) process for making components used in mobile phones with its Silicon Germanium (SiGe) BiCMOS process.

Market analysis firm, Strategy Analytics has predicted, the combined millimeter wave and Front End Module (FEM) market is estimated to grow 23% (CAGR) from $400 million in year 2009 to over $750 million in year 2012, quite a higher growth compared to other semiconductor devices.

Jazz's BiCMOS process is capable of integrating SiGe transistor performing up to 200GHz.

"We continue to see migration of GaAs products into SiGe as an exciting growth opportunity for our technology. This transition is largely complete in optical front-end components but just beginning in cellular phone front-ends and millimeter-wave applications," said Dr. Marco Racanelli, Senior Vice President and GM of RF/HPA and Aerospace and Defense Business Groups. "We will continue to invest in high performance processes as well as design enablement infrastructure to speed time-to-market for our customers in these emerging applications."