Date: 20/07/2009

STMicroelectronics formally launched Nano2012 research and development program

STMicroelectronics and CEA-LETI, the French Laboratory for Electronics & Information Technology, have formally launched the Nano2012 Research and Development program at ST's crolles' site near Grenoble, France. IBM is also a key partner in this program which aims to create new generations of semiconductor technologies.

The Nano2012 cooperation program are designed for strengthening Europe's electronics industry by providing competitive access to the most advanced CMOS technologies from 32nm down to 22nm. Work on the Nano2012 program started on January 1, 2008. The five-year program, which will run until December 31, 2012, is partly funded (Euros 457 million) by the French public authorities. The program includes the participation of other partners such as INRIA (the French National Institute for Research in Computer Science and Control), CNRS (National Center for Scientific Research), universities, and many small- and medium-sized enterprise partners.

ST and CEA-LETI have a long history of R&D collaboration, including the initial set up of the Crolles R&D center in 1992. As a leading research laboratory, CEA-LETI provides a vital interface between long-term academic research and ST's market-driven industrial R&D. In July 2007, ST joined the semiconductor Joint Development Alliance centered at IBM's Semiconductor Research and Development Center in East Fishkill and Albany, New York, which develops core and low-power CMOS processes from 32 to 22nm, and IBM joined ST in Crolles to develop value-added application-specific derivative CMOS technologies. Additionally, CEA-LETI and IBM, which have strong and complementary expertise in the development of materials and processes required for CMOS technology, are collaborating on advanced process R&D down to 22nm and beyond, at CEA-LETI's Grenoble site (France), IBM's East Fishkill facility (NY), ST's Crolles site (France), and at the Albany NanoTech research center (NY).

Since the start of the Nano2012 program in January 2008, ST and IBM have exchanged researchers between their sites at Crolles and East Fishkill and have begun working along with researchers from CEA-LETI on a variety of key programs, including 32nm and 28 nm core CMOS processes, 45nm RF (Radio Frequency) derivative technology for wireless applications and 65nm non-volatile-memory derivative technology for use in automotive and smart-card applications. These technologies will allow exciting new products in communication, consumer, computer and automotive applications that consume less power and last longer on batteries, operate faster, and provide more functions and greater utility to end users.STMicroelectronics and CEA-LETI, the French Laboratory for Electronics & Information Technology, have formally launched the Nano2012 Research and Development program at ST's crolles' site near Grenoble, France. IBM is also a key partner in this program which aims to create new generations of semiconductor technologies.

The Nano2012 cooperation program are designed for strengthening Europe's electronics industry by providing competitive access to the most advanced CMOS technologies from 32nm down to 22nm. Work on the Nano2012 program started on January 1, 2008. The five-year program, which will run until December 31, 2012, is partly funded (Euros 457 million) by the French public authorities. The program includes the participation of other partners such as INRIA (the French National Institute for Research in Computer Science and Control), CNRS (National Center for Scientific Research), universities, and many small- and medium-sized enterprise partners.

ST and CEA-LETI have a long history of R&D collaboration, including the initial set up of the Crolles R&D center in 1992. As a leading research laboratory, CEA-LETI provides a vital interface between long-term academic research and ST's market-driven industrial R&D. In July 2007, ST joined the semiconductor Joint Development Alliance centered at IBM's Semiconductor Research and Development Center in East Fishkill and Albany, New York, which develops core and low-power CMOS processes from 32 to 22nm, and IBM joined ST in Crolles to develop value-added application-specific derivative CMOS technologies. Additionally, CEA-LETI and IBM, which have strong and complementary expertise in the development of materials and processes required for CMOS technology, are collaborating on advanced process R&D down to 22nm and beyond, at CEA-LETI's Grenoble site (France), IBM's East Fishkill facility (NY), ST's Crolles site (France), and at the Albany NanoTech research center (NY).

Since the start of the Nano2012 program in January 2008, ST and IBM have exchanged researchers between their sites at Crolles and East Fishkill and have begun working along with researchers from CEA-LETI on a variety of key programs, including 32nm and 28 nm core CMOS processes, 45nm RF (Radio Frequency) derivative technology for wireless applications and 65nm non-volatile-memory derivative technology for use in automotive and smart-card applications. These technologies will allow exciting new products in communication, consumer, computer and automotive applications that consume less power and last longer on batteries, operate faster, and provide more functions and greater utility to end users.