Date: 19/12/2008

Nonlinear modeling technique for transistors and amplifiers

Agilent Technologies has announced a breakthrough nonlinear modeling technique for components such as amplifiers and transistors that are commonly used in the wireless and aerospace defense industries. The X-parameters can be generated either from simulation with the company's ADS EDA software or from Agilent's test and measurement instruments, for faster communications-product development.

X-parameters make it simple to capture non-linear behavior with the same ease and accuracy as measuring or simulating linear S-parameters. Agilent's new patent-pending X-parameter technology allows designers to capture the non-linear behavior of active components such as amplifiers and transistors and save them in transportable RF intellectual property for use in RF system or circuit designs in ADS.

"Literally in five minutes, you can generate a nonlinear X-parameter model from an off-the-shelf amplifier by measuring it with Agilent's Non-Linear Vector Network Analyzer (NVNA), and you can start doing non-linear designs with it in ADS immediately," said Jason Horn, R&D engineer with Agilent's High-Frequency Technology Center, and one of the inventors of X-parameter technology.

Advanced Design System enables X-parameter nonlinear model generation from simulation, allowing design houses to create nonlinear X-parameter models of their RFIC and MMIC; power amplifier modules (PAMs); front-end modules (FEMs); and multiport devices such as mixers.
For firther information visit www.agilent.com/find/eesof-x-parameters.