Date: 19/12/2008

Micron works with Sun Micro to achieve one million write cycles in NAND flash

One of the limitation of flash memory is, less number of write cycles compared to DRAM and SRAM. To improve on this, Micron Technology has worked with Sun Microsystems to develop a new single-level cell (SLC) enterprise NAND technology capable of achieving one million write cycles. The new technology delivers the highest write/erase cycling capability of any NAND technology available on the market.
Though this is a step further but lot more has to be done in writing speed and other limitation of flash to stop other budding nonvolatile memory technologies entering the main market.

The other nonvolatile memory technologies such as PRAM, FRAM still got to undergo significant improvements to beat the advantage of flash.

Micron is now sampling its Enterprise NAND in densities up to 32 gigabits (Gb).