Date: 28/11/2008

UMC's successful high-k/metal-gate solution at 45nm paves way for 32/28nm production

UMC has validated high-k/metal-gate (HK/MG) technology process through 45nm SRAM product yield. This technology will be used to migrate to next generation 32/28nm process.

Mr. S.C. Chien, vice president of Advanced Technology Development at UMC said, "we are well positioned to offer customers a strong technology platform solution when our 32/28nm technology becomes available in 2010."
UMC's dual approach for its 32/28nm technology addresses different market applications. The foundry uses conventional silicon gate/silicon-oxy-nitride gate oxide technology for its LL process, which is ideal for portable applications such as mobile phone ICs, while the HK/MG stack is primarily aimed at speed-intensive products such as graphic, application processor, and high-speed communication ICs. The HK/MG option can also be customized for 32/28nm low power applications to address individual customer requirements.