Date: 02/11/2008

UMC to make SRAM chips at 28nm node

United Microelectronics Corp. (UMC) has announced that, it has manufactured SRAM chips using 28nm technology through double-patterning immersion lithography and advanced strained-silicon technology. UMC's own low-leakage (LL) process technology is utilized to make six-transistor SRAM cell sizes of approximately 0.122 um2.
The foundry uses conventional silicon gate/silicon-oxy-nitride gate oxide technology for its LL (low leakage) process for making mobile phone ICs. For products such as graphic, application processor, and high-speed communication ICs, high-k/metal gate stack will be used.
28nm node will double the SRAM capacity compared to the present 40nm node the UMC is employing. UMC will also provide foundry services for customized 32nm technologies based on its 28nm process platform.