Date: 20/11/2006

ST Micro and Velox Semiconductor signed agreement to launch new range of GaN Schottky diodes jointly.

GaN, a wide band-gap semiconductor material mostly limited to latest Optoelectronic devices is now researched further by Velox Semiconductor to use it as low loss switching diode in switch mode power supplies. Velox has this technology ready with the plans to release 600V GaN Schottky diodes shortly. ST Microelectronics, by agreeing to jointly release these products with Velox has certified GaN diodes worthiness. There are many chances for a startup to fail on new technologies, but here ST Micro's support as an alternate supplier will not make your GaN based designs obsolete that easily.

The advantage of GaN devices are, low switching losses, no voltage shoot during turn off, and improved temperature performance.