Date: 27/04/2025

Enhancing reliability of GaN MISHEMTs in RF power amplifiers for next-gen communication systems

At the IEEE International Reliability Physics Symposium 2025, imec announced a significant breakthrough in the stability of GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) for RF power amplifiers. Despite challenges with positive bias (on-state) instability, imec's research demonstrates that GaN MISHEMTs maintain consistent performance within a well-defined operating range, paving the way for reliable 5G+/6G communication systems.

Figure: (Top left) Schematic of the MISHEMTdevice, and (Top right) critical stress states during power amplifier operation. (Bottom) Comparison of the 4 analysis of papers presented at the 2025 IEEE IRPS conference from imec's advanced RF program in collaboration with Prof. Tian-Li Wu's team in NYCU in Taiwan.

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