ROHM starts production of 150V GaN HEMTs with Vgs of 8V
ROHM said it has started the production of 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) where these devices can withstand gate to source voltage of 8 Volts. GNE10xxTB series is avaialable in packages supporting better heat dissipation and large current capability, facilitating handling during the mounting process.
Rohm now makes both SiC devices and GaN power semiconductor devices. Ministry of Economy, Trade, and Industry (METI) of Japan has set a target of 30% energy savings for new data centers by 2030, in response to this, ROHM has developed a new GaN device that provides a gate withstand voltage of 8V, the industry’s highest, providing a high degree of robustness and stability while achieving superior energy savings, says Rohm.