Date: 01/09/2010

Device named DIOFET from Diodes Inc integrate Schottky diode and MOSFET in single package

Diodes Inc. has released the DMS3014SSS and DMS3015SSS, products of its DIOFET process that monolithically integrates a power MOSFET and anti-parallel Schottky diode into a single die. The DMS3014SSS and DMS3015SSS is used in the low side MOSFET position of synchronous buck point-of-load (PoL) converters, to improve the efficiency and lower the operating temperature of fast switching PoL converters in high volume computing, telecom and industrial applications.

This device has a typical RDS(ON) ratings of 10m ohms and 8.5m ohms, respectively, at VGS of 10V. Diodes Inc. claims that the forward voltage of the DIOFET's integrated Schottky diode is 25% lower than comparable MOSFET/schottky solutions and 48% lower than that of the intrinsic body diode of a typical MOSFET, thereby minimizing switching losses and improving efficiency. The low QRR of DIOFETs integrated schottky and softer reverse recovery characteristics further contribute toward minimizing body diode switching losses.

The DIOFETs operate at a temperature that is 5% lower than that of competing solutions. As every 10degC reduction in MOSFET junction temperature doubles lifetime reliability, the lower operating temperature of the DIOFETs increases the reliability of the PoL converter.

For more information visit: http://www.diodes.com