Date: 01/10/2012

NXP releases automotive grade dual Power-SO8 MOSFETs

NXP Semiconductors N.V. has introduced the LFPAK56D portfolio – a range of dual Power-SO8 MOSFETs specifically designed for automotive applications including fuel injection, ABS and stability control. The NXP LFPAK56D MOSFETs are automotive AEC-Q101 qualified to 175 Deg C and they deliver 77 percent smaller footprint than the equivalent DPAK solution. The LFPAK56D range is in volume production and is available immediately.

LFPAK56D combines two fully isolated MOSFETs into a single package designed to meet the requirements of the automotive industry. The new range of dual Power-SO8 MOSFETs provides customers complete flexibility to select the device that best matches the application and module requirements.

Advantages of designing with LFPAK56D include lowers costs through simpler PCB assembly, ease of inspection and shrinking module size. Smaller modules also means a major saving in weight, which is particularly attractive to manufacturers focused on reducing CO2 emissions.

NXP is now introducing a reliable “copper clip” bonding technology to dual Power-SO8 MOSFETs in LFPAK56D. This copper clip technology is what gives the package its advantage in low package resistance, inductance and high maximum ID rating.

“We believe that LFPAK56D will set a new industry benchmark for automotive MOSFETs, enabling OEMs to maximize efficiency and achieve significant cost savings through the development of smaller, more compact products,” said Steve Sellick, business development manager, automotive MOSFETs, NXP Semiconductors. “Our portfolio of automotive qualified Power-SO8 MOSFETs is the most comprehensive in the industry, providing our customers the broadest possible choice when designing safety-critical automotive applications.”

For more information: http://www.nxp.com/LFPAK56D

Source: NXP