Date: 26/09/2012

ST uncovers its silicon carbide solutions at SPI 2012

STMicroelectronics unveils its advancement in silicon carbide devices at Solar Power International (SPI) 2012 that enable systems producers to build ultra-efficient electronics for converting raw solar energy into grid-quality power.

ST’s 1200V silicon carbide diodes replace ordinary silicon diodes in the DC-DC boost converter and DC-AC inverter that convert the photovoltaic module’s low-voltage output into high-quality AC power at the correct line voltage.

Silicon carbide is superior to ordinary silicon bipolar technology when used as a material for diodes targeting solar-power conversion applications. Silicon carbide diodes can switch quickly between conducting and non-conducting states without suffering the reverse recovery current that occurs when switching bipolar diodes. 70% of energy is saved by avoiding this unwanted effect and thus enhances freedom for designers to optimize the system operating frequency.

ST’s trials using 1200V silicon carbide diodes have shown a 2% increase in overall inverter yield, even when operating at high load and high frequency. Over the intended lifetime of inverters used in installations such as residential photovoltaic systems and high-power solar farms, this improvement can effectively save many Megawatt-hours of valuable energy.

ST unveils the advancement in its silicon carbide MOSFET program at SPI 2012. The applications for silicon carbide MOSFETs and diodes include bulk power supplies used in energy-hungry computer rooms and data centers, and motor-drive electronics in electric vehicles.

Source: ST Microelectronics