Date: 03/09/2012

150-mm 4HN SiC epitaxial wafers from Cree

Cree, Inc. has announced the availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers to lower device cost, increase production rate, and enable adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns are available for immediate purchase from Cree.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications.

“Cree’s ability to deliver high volumes of 100-mm epitaxial wafers is unrivaled in the SiC industry and our latest 150-mm technology continues to raise the standards for SiC wafers,” said Dr. Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150-mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”