Date: 09/08/2012
6-9.4 Amps, 2mmx2mm, P-channel MOSFETs for power supply circuits
Fairchild Semiconductor has expanded its line of P-Channel PowerTrench MOSFETs with FDMA910PZ and FDME910PZT featuring MicroFET MOSFET package with improved thermal performance in a size of 2 x 2 mm & 1.6 x 1.6 mm for switching and linear mode applications. Available with a 20V rating these devices have optimized Zener diode protection for ESD safety and to reduce IGSS leakage maximum rating from 10ľA to 1ľA.
Features and Benefits:
FDMA910PZ
Max RDS(ON) = 20 mO at VGS = -4.5V, ID = -9.4A
Max RDS(ON) = 24 mO at VGS = -2.5V, ID = -8.6A
Max RDS(ON) = 34 mO at VGS = -1.8V, ID = -7.2A
Low profile - 0.8 mm maximum in the MicroFET 2 x 2 mm package with HBM ESD protection level > 2.8kV typical
FDME910PZT
Max RDS(ON) = 24mO at VGS = -4.5V, ID = -8A
Max RDS(ON) = 31mO at VGS = -2.5V, ID = -7A
Max RDS(ON) = 45mO at VGS = -1.8V, ID = -6A
Low profile: 0.55 mm maximum in the MicroFET 1.6 x 1.6 mm Thin Package with HBM ESD protection level > 2kV typical
The FDMA910PZ and FDME910PZT are free from halogenated compounds and antimony oxides and are RoHS-compliant. Both devices provide safe operation at low-voltage and are suitable for use in handsets and portable devices.
Price: US $ in 1,000 quantity pieces
FDMA910PZ: $0.36
FDME910PZT: $0.33
Availability: Samples available upon request.
Delivery: 8-12 weeks ARO