Date: 25/06/2012

SiGe:C HBT transistors from Infineon for WiFi, WiMAX and UWB radios

Infineon Technologies AG launched a new SiGe:C (Silicon-Germanium: Carbon) HBT (hetero-junction bipolar transistor) device series for Low Noise Amplifier (LNA) applications. The new BFx840xESD series is suggested for design of consumer wireless products operating in the 5-6 GHz range, including current and next generation WiFi access points and modules and supports latest IEEE 802.11ac standard . Additional applications for the new devices include WiMAX and UWB wireless and satellite communications.

BFx840xESD series offer 18 dB gain and 0.96 dB noise figure with 8 external passives and a single inductor in WiFi LNA application circuits. These transistors, when measured on device level in the test fixture, achieve 22 dB - 23 dB maximum gain and have best-in-class noise figures of 0.65 dB - 0.85 dB in 5 GHz band applications. This allows engineers to readily meet design goals of total system noise levels below 2dB. WiFi LNA designs using these transistors need 50 percent fewer external parts than other available solutions, claims Infineon.

“This evolution of the Infineon SiGe:C portfolio provides designers with the means to achieve RF performance goals in compact, low power wireless systems,” said Houssem Chouik, Product Marketing Manager for RF Transistor Solutions at Infineon Technologies. “Based on the eighth generation of our HBT process technology, these new devices once again meet or exceed the RF performance levels of alternatives and provide cost savings by reducing the number of passive devices needed in system design.”


Key Characteristics:
· On-chip electrostatic discharge (ESD) protection up to 1.5 kV human body model (HBM) and RF power overdrive handling capability of 20 dBm.

· Operation with supply voltage down to 1.2 V.

· Availability in three different package types for design-in to different platforms, including standard SOT-343, flat-lead TSFP-4-1, and ultra low-height (0.31 mm) TSLP-3-9 for RF module applications.

Availability: Samples of the BFDx840xESD are now available, along with evaluation boards. Production ramp is expected this summer.

For more info visit www.infineon.com/next-generation_rf-transistors