Date: 24/06/2012

GaAs SMD low-noise amplifiers from TriQuint for infrastructure applications

TriQuint Semiconductor has announced the initial sample availability of two packaged, surface-mount low-noise amplifiers (LNAs) TQP3M9036 and TQP3M9037 for base station and similar applications. The new devices are based on the company's GaAs E-pHEMT process.

The LNAs find their use in infrastructure applications such as cellular base stations, tower-mounted amplifiers (TMAs), small cell wireless networks, repeaters, 700-MHz LTE networks, and emerging wireless systems using "white spaces" in the UHF spectrum.

The devices address the growing TDD-LTE market with integrated digital shut-down biasing capability and can deliver high performance from bias voltages of +3 V to +5 V without a negative supply voltage. The biasing network maintains stability over temperature through a current mirror and resistive feedback and it also offers the switching circuit for the digital power-down function.

Specifications of TQP3M9036:
1. 400 to 1500 MHz LNA
2. 0.45dB noise figure
3. 19dB gain at 900 MHz
4. +35dBm OIP3 linearity
5. +20dBm P1dB RF output
6. +3 to + 5VDC supply

TQP3M9037:
1. 1.5 to 2.7 GHz LNA
2. 0.4dB noise figure
3. 20dB gain at 1900 MHz
4. +36dBm OIP3 linearity
5. +21dBm P1dB RF output
6. +3 to +5VDC supply

Both the devices are pin-compatible with similar products in the TriQuint portfolio and are housed in the RoHS-compliant 2 x 2 mm, 8-lead DFN packages. They are rugged and can block high-power interfering input signals or transmit power leakages greater than +22dBm. The devices are also stable to eliminate potential oscillations. The TQP3M9036 and TQP3M9037 are internally matched to 50 ohms and do not require any external matching circuitry for operation.

Initial samples of TQP3M9036 and TQP3M9037 are currently available and production is expected in September 2012.