Date: 18/06/2012

TriQuint has released 4 new GaN products for defense & commercial systems

TriQuint Semiconductor, Inc has released four new gallium nitride (GaN) devices at the IMS / MTT-S Symposium in Montreal, Canada (June 17-22). TriQuint GaN solutions improve RF efficiency and enhance system ruggedness.

GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies. GaN devices are also seen by the industry as key to future 'green' RF and DC-DC power solutions that can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.

TriQuint has announced the below three new GaN power amplifiers for communications, defense and civilian radar.
1. TGA2572-FL (14-16 GHz), now available
2. TGA2579-FL (14-15.5 GHz), available in July
3. TGA2593-GSG (13-15 GHz), available in July

TriQuint has also announced the availability of T1G6003028-FS, a 30W wideband GaN packaged transistor.