Date: 18/06/2012

NXP’s new LDMOS RF power transistor offer up to 115 MHz bandwidth

NXP has released and new LDMOS transistor which offers up to 115 MHz of signal bandwidth to enable full-band operation for all cellular frequency bands, including GSM, W-CDMA and LTE, and video bandwidth up to 300 MHz.

LDMOS transistors offer P1dB powers up to 270 watts in SOT502-sized packages, and 400 watts in SOT539-sized packages. NXP says the breakthrough power density of NXP’s Gen8 LDMOS transistors helps to reduce the size and weight of Doherty amplifiers – and ultimately the base station cabinet - significantly. Combined together, these enhancements also reduce total expenditures related to cooling and operation. Engineering samples of 17 product types are now available. NXP to showcase its latest Gen8 LDMOS transistors at next week’s MTT-S International Microwave Symposium 2012 in Montreal, Canada (booth 607).