Date: 13/06/2012

60W, S-Band GaN HEMT transistor from Cree for military and radar applications

Cree, Inc. has announced the sample release of an unmatched GaN HEMT transistor 'CGH35060' for military and commercial S-Band radar applications. This transistor is rated at 60W for frequencies between 3.1 and 3.5GHz and delivers better drain efficiency of nearly 70 percent when compared to conventional silicon or GaAs MESFET devices. The combination of high efficiency and power density helps minimize thermal management requirements.

"The introduction of the new Cree S-Band GaN HEMT devices gives our customers a complete portfolio of superior S-Band GaN transistors and MMICs for use in high-power amplifier circuits for commercial radar applications," said Jim Milligan, director, Cree RF and microwave. "Their high efficiency allows for extended pulse capability along with superior signal fidelity, which in turn minimizes the thermal management requirements, enabling RF design engineers to dramatically reduce the size and weight of radar systems while increasing their range and lowering installation costs."

Features:
1. Pulsed power rating: 60W (at a pulse width of 100usec)
2. Power gain: 12dB
3. Drain efficiency: 65 percent at 28V operation (50 percent higher than typical silicon LDMOS devices)
4. S-Band frequencies: 3.1 - 3.5GHz
5. Longer pulse and duty capability (<0.6dB)
6. Superior signal fidelity with low power drop

These transistors are complemented by Cree's CGH31240F/CGH35240F/CMPA2735075F.

For information: www.cree.com