Date: 05/06/2012

50/100 W GaN HEMT power transistors from Cree for radar and satellite communications

Cree, Inc. has released its X-Band, fully matched Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) for commercial radar and satellite communications applications. These transistors are rated at 50W and 100W. Cree says that these new GaN devices deliver "game-changing" efficiency and performance improvements when compared to existing Gallium Arsenide (GaAs) Metal-Semiconductor Field Effect Transistor (MESFET) or traveling wave tube (TWT) based amplifiers.

The X-Band product family consists of four new GaN HEMT transistors; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a small footprint of 0.9 x 0.7" package.

Product Output power @ VDD=40V Frequency Power added efficiency
CGHV96050F1 50W (25W linear under OQPSK) 7.9-8.4 GHz 30% (Linear)
CGHV96100F1 100W (50W linear under OQPSK) 7.9-8.4 GHz 28% (Linear)
CGHV96050F2 50W Pulsed (100µSec, 10% duty) 8.4-9.6 GHz 50% (PSAT)
CGHV96100F2 100W Pulsed (100µSec, 10% duty) 8.4-9.6 GHz 45% (PSAT)
"The new Cree X-Band GaN HEMT product family represents disruptive technology that we believe will set new standards of efficiency and performance for high-frequency, high-power applications such as satellite communications and X-Band commercial radar," explained Jim Milligan, director, Cree RF and microwave. "The performance advantages of higher power ratings, higher linear efficiency and higher gain, combined with a reduced footprint, offer dramatic advantages when compared to GaAs MESFET transistors or TWT amplifiers. We believe this new product family will deliver comprehensive system benefits, including superior thermal management and significantly-reduced power supply loads. The new product family also offers a lower cost alternative to TWT amplifiers and associated high-voltage power supplies and linearization systems while improving overall system reliability."

The company claims that the efficiency advantages in using these new GaN devices can be up to three times greater when compared to available GaAs MESFET transistors. Also, the wide video bandwidth of GaN HEMT transistors allows for their use in multi-carrier applications with two tone spacing up to 70MHz.

The fully matched GaN HEMT transistors complement two previously released packaged MMICs, designated the CMPA5585025F and CMPA801B025F, which can also be used as drivers for the CGHV96050 or CGHV96100.

For additional information www.cree.com/rf