Date: 29/05/2012

Half-bridge topology RF power MOSFET from Microsemi offers 92% efficiency at 1kW

Microsemi Corporation has introduced the DRF1400 power MOSFET for the use in RF generators. This device is suitable for a wide range of industrial, scientific and medical (ISM) applications including plasma generation for semiconductors, LCD and solar cell manufacturing, and CO2 lasers operating up to 30 MHz.

The low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide better stability and control in kW to multi-kilowatt, high frequency ISM applications.
Features:

a. Half-bridge topology
b. Efficiency >92% at 1kW
c. Integrated RF drivers for simplified driver stage design allows simple logic signals at input
d. Internal bypass capacitors for reduced parasitic inductance
e. Breakdown voltage: 500V
f. Thermal performance package delivers up to 1.4 kW of power

Engineering samples of the DRF1400 are available now. An associated DRF1400 reference design kit (13.56 MHz, Class-D half bridge) is also available for purchase from Microsemi.

DRF1400 data sheet is at: http://www.microsemi.com/en/fulltext-search/drf1400

Design guide for RF system designers is at: http://www.microsemi.com/en/sites/default/files/datasheets/1817%20B.pdf