Date: 14/05/2012

New generation 1200 V NPT IGBT from Microsemi

Microsemi Corporation has introduced the first in a series of new generation 1200 volt (V) non-punch through (NPT) IGBTs. The new family of IGBTs leverages Microsemi's Power MOS 8 technology, and offers reduction of 20 percent or more in total switching and conduction losses as compared to competitive solutions. The IGBTs are targeted at applications including welding, solar inverters, and uninterruptible and switch mode power supplies.

APT40GR120B, APT40GR120S and APT40GR120B2D30 are the new products offered on a standalone basis or can be packaged in combination with one of Microsemi's FRED or silicon carbide Schottky diodes.

Features:
1. Low gate charge (Qg)
2. Hard switching operation greater than 80 KHz
3. Easy to parallel (positive temperature coefficient of Vcesat)
4. Short Circuit Withstand Time Rated (SCWT) for reliable operation
5. The APT40GR120B transistor is offered in a TO-247 package
6. The APT40GR120S is packaged in surface mount D3 PAK
7. The APT40GR120B2D30 is a T-MAX packaged device that includes a 30A anti-parallel, ultrafast recovery diode

The first two of Microsemi's new NPT IGBTs are fully characterized and in production now.