Date: 08/05/2012

30 V n-channel power MOSFETs from Vishay offers low on-resistance

Vishay Intertechnology has introduced the first devices in its next generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs. Utilizing a new high density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mohm at 4.5 V and low Miller charge, Qgd, down to 1.8 nC in the PowerPAK SO-8 and 1212-8 packages.

The new Vishay Siliconix TrenchFET IV power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today's power electronics systems. With a reduction in on-resistance times silicon area of over 60 % compared to previous-generation devices, the SiRA00DP is able to demonstrate low RDS(on) values of 1.0 mohm at 10 V and 1.35 mohm at 4.5 V. For designers, the MOSFETs' low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.

TrenchFET Gen IV MOSFETs offer a new structure that utilizes a very high density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices.

The SiRA00DP, SiRA02DP, and SiRA04DP provide increased system efficiency and lower temperatures in the 6.15 X 5.15 mm PowerPAK SO-8 package, while the SiSA04DN offers similar efficiency with a third of the size in the 3.30 X 3.30 mm PowerPAK 1212-8 package.

The SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN are suitable for high power density DC/DC converters, synchronous rectification, synchronous buck converters, and OR-ing applications. End products include switch mode power supplies, voltage regulator modules (VRMs), POLs, telecom bricks, PCs, and servers.

The TrenchFET Gen IV devices are 100 % Rg and UIS tested. They are halogen-free according to the IEC 61249-2-21 definition and RoHS-compliant.

Part # SiRA00DP SiRA02DP SiRA04DP SiSA04DN
VDS (V) 30 30 30 30
VGS (V) 20 20 20 20
RDS(ON) (ohms) max.VGS = 10 V 0.001 0.002 0.00215 0.00215
VGS = 4.5 V 0.00135 0.0027 0.0031 0.0031
Qg (nC) VGS = 4.5 V 66 34.3 22.5 22.5
Qgs (nC) 26 13.6 8.6 8.6
Qds (nC) 8.6 4.1 4 4
Package PowerPAK SO-8 PowerPAK SO-8 PowerPAK SO-8 PowerPAK 1212-8
Samples of the TrenchFET Gen IV MOSFETs are available now. Production quantities will be available in Q1 2012 with lead times of 12 weeks for large orders.