Date: 08/05/2012

Availability of the fully functional DDR4 DRAM from Micron

Micron Technology has announced development of its DDR4 DRAM module. The 4-gigabit (Gb) DDR4 x8 part is codeveloped by Nanya and is based on Micron's 30-nanometer technology.

For the soldered down space, x8, x16, and x32 components shall be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s.

"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development," said Brian Shirley, vice president for Micron's DRAM solutions group. "We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production."

Micron is to become compliant with its 30nm 4Gb DDR4 part as JEDEC finalized the DDR4 specifications. Full sampling to key partners began earlier this year and volume production is planned for 4Q12.