Date: 02/05/2012

N-Channel power MOSFETs from Vishay with 0.130 ohms of on-resistance

Vishay Intertechnology has released the first devices in its next-generation D series of high voltage power MOSFETs. The new 400 V, 500V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.

The device is designed using the stripe technology that results in a smaller die size and terminations. This lowers the total gate charge by 50 % compared to previous generation solutions, increases switching speed and reduces on-resistance and input capacitance.

The low on-resistance values translate into low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.

The D series MOSFETs feature simple gate drive circuitry, high body diode ruggedness, and are easy to design into more compact, lighter, and cooler end products. The devices are RoHS compliant, halogen free according to the IEC 61249-2-21 definition, and avalanche (UIS) rated for reliable operation.

Samples of the new D Series power MOSFETs are available now. Production quantities will be available in Q3 2012, with lead times of 12 to 16 weeks for larger orders.
For more info visit Vishay.com