Date: 29/04/2012

3D high density capacitor achieves 550nF/mm2, reveals Leti and IPDiA

CEA-Leti and IPDiA has overcome a crucial step toward market deployment of a new generation of 3D high density capacitor achieving 550nF/mm2.

CEA-Leti and IPDiA are developing a new process based on deposition of atomic medium-K dielectric layers into the architectures of IPDiA's 3D dimensional metal-insulator-metal capacitors. The atomic layer deposition (ALD) is a process technology to enable conformal coating of high aspect ratio surfaces and to enable exact thickness control on atomic level. A capacitance density of 550nF/mm2 has been obtained by keeping leakage current and parasitic levels as low as in the 250nF/mm2 PICS3 product.

The "PICS" high-density capacitors are using the 3rd dimension to increase the capacitor surface and thus its capacitance without increasing the capacitor footprint. This technology demonstrates high stability in temperature, voltage and ageing and very low parasitic elements like ESR, ESL. So, with better performance in a smaller volume, makes this device an alternative to discrete component MLCC and tantalum capacitors.

These devices are suitable in high reliability applications such as instance DC/DC converter and decoupling functions within limited space like IC decoupling, MEMS, sensors, memory stick, smartcard, etc.,

IPDiA and CEA-Leti are continuing their developments to improve the market deployment towards achieving the 1µF/mm2 process.