Date: 19/04/2012

Low profile DFN2020-6 packaged MOSFET from Diodes for thin systems

Diodes Incorporated has launched a line of N- and P-channel MOSFETs in low profile DFN2020-6 packages. These MOSFETs have an off-board height of 0.4mm and a footprint of 4mm2.

Diodes claims that the DFN2020H4 packaged DMP2039UFDE4, a -25V rated P-channel device, is 50% thinner than competing devices. The other MOSFETs in the series are provided in the 0.5mm high DFN2020E package, which is 20% thinner than the common 0.6mm high alternatives.

The DMP2039UFDE4 provides circuit designers with 3kV protection against human-borne electrostatic discharge and hence may be used in load switching applications. The DMN6040UFDE operates at 60V VDS and introduced in a DFN2020 package, may be used in small form-factor industrial and HVAC controls

The 20V N-channel DMN2013UFDE may become a load switch or high-speed switch in DC/DC buck and boost converters and offers a high 2kV ESD protection rating.

This MOSFET may be used in portable product designs such as smart phones, tablets and digital cameras due to it's low profile nature.

The initial series of nine MOSFETs is comprised of -12V, -20V, -25V and -40V P-channel and 12V, 20V and 60V N-channel parts.