Date: 13/02/2012

SPICE model for SiC MOSFET power devices from Cree

Cree, Inc. has made available fully-qualified SPICE model for SiC MOSFET power devices. SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree's behavior-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs.

Cree SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

The Cree SiC MOSFET SPICE model is available for download at www.cree.com/power/mosfet.asp