Date: 13/02/2012

1700V SiC schottky diodes from Cree both in bare die and TO-247-2 package

Cree, Inc. has introduced a series of packaged diodes that deliver the industry's highest blocking voltage available in SiC Schottky technology. Cree's 1700V Z-Rec Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives.

"Cree's 1700V silicon carbide Schottky diodes are ideal for high-efficiency power electronics systems," explained Cengiz Balkas, Cree vice president and general manager, Power and RF. "They provide all the proven benefits of Cree's Z-Rec SiC Schottky diodes-zero reverse recovery losses, temperature-independent switching and higher frequency operation."

These devices are available in bare die form as well as TO-247-2 package.

"The availability of 1700V SiC Schottky diodes provides a number of advantages for design engineers in high-voltage power applications," added Balkas. "Silicon carbide diodes enable maximum power efficiency and better EMI performance. The switching loss improvement allows for increased system frequencies that can reduce the size of magnetic and capacitive components. Significant reductions in system size, weight and cost can be achieved. Moreover, the availability of 1700V SiC diodes can eliminate the need for stacking multiple lower voltage silicon diodes, thereby cutting component count, improving thermal performance and increasing reliability."

Designated the C3Dxx170H Series, the new Cree SiC Schottky diodes are rated for 10A/1700V and 25A/1700V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated for -55°C to +175°C.