Date: 05/02/2012

SiC Schottky diodes and power transistors in single package for industrial apps

Renesas Electronics has launched 600V power semiconductor devices RJQ6020DPM, RJQ6021DPM and the RJQ6022DPM packing multiple Silicon Carbide (SiC) diodes and multiple power transistors in a single package to make a power converter circuit or switching circuit.

SiC tech based semiconductor devices are getting mainstream in power switching for their properties of high-speed and low-loss and also for reliability.

Key features of the three new SiC power devices:
(1) The RJQ6020DPM: Combines in a single package an SiC-SBD and two high-voltage power MOSFETs required in switching circuits for critical-conduction mode PFC in the power supplies of products such as air conditioners or flat-panel TVs. The reverse recovery time (trr) of the SiC-SBD is 15 nanoseconds (ns), and the high-voltage power MOSFETs employ deep-trench configuration to achieve a low on-resistance of 100 milli ohms.

(2) The RJQ6021DPM: Combines in a single package an SiC-SBD and two IGBTs required for PFC in applications such as AC/DC rectifiers for communication equipment and PC servers.
The reverse recovery time (trr) of the SiC-SBD is 15 nanoseconds (ns), and the IGBTs deliver a low on-voltage of 1.5 V that is ideal for continuous-conduction mode PFC applications.

(3) The RJQ6022DPM: Combines in a single package two SiC-SBDs and two IGBTs required for half-bridge circuits in inverters for applications such as motor drive in air conditioners and industrial machinery. The reverse recovery time (trr) of the SiC-SBD is 15 nanoseconds (ns), and the ultra-thin-wafer IGBTs deliver a low on-voltage of 1.5 V and short circuit time (tsc) of 6 microseconds (µsec.), which is suitable for motor drive applications.

Renesas says all these are available in a fully molded TO-3P package with a 5-pin configuration and pin assignments optimized for specific applications, making it easy to configure a circuit unit incorporating them.

Pricing and Availability: Samples of Renesas' new SiC compound power devices are scheduled to begin in February 2012, priced at US$10 per unit. Mass production is scheduled to start in May 2012 and is expected to reach a combined volume of 300,000 units per month in April 2013.

For more info visit www.renesas.com