Date: 29/01/2012

Elpida Memory Develops Resistance RAM Prototype

Elpida Memory, Inc. has developed high-speed non-volatile resistance memory (ReRAM) prototype made using a 50nm. The memory density is 64 megabits. Further work on ReRAM development is conducted with Sharp Corporation , the National Institute of Advanced Industrial Science and Technology (AIST, another Japanese public institution) and the University of Tokyo.

ReRAM (Resistance Random Access Memory) is next-generation semiconductor memory technology that uses material which changes resistance in response to changes in the electric voltage.

ReRAM has a write speed of 10 nanoseconds , about the same as DRAM, and write endurance of more than a million times, or more than 10 times greater than NAND flash.

The challenge in producing this memory is in increasing its storage capacities and manufacturing at lower costs.