Date: 12/01/2012

Toshiba to launch SLC NAND flash memory embedded ECC

Toshiba Corporation is sampling single level cell (SLC)NAND flash memory chips embedded with error correction code (ECC) called BENAND. These ECC integrated flash memory chips are suggested for applications such as LCD TVs and digital cameras along with robots and other industrial applications. 4Gb and 8Gb are now sampling with volumes slated from March 2012.

Toshiba explains the simple interface and high reliability of small capacity SLC NAND has won it wide use in consumer applications and industrial programming. Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.

BENAND embeds an ECC with an error correction of 4 bit per 512 bytes onto Toshiba's 32nm process SLC NAND flash memory. Package and pin configuration compatible with general SLC NAND flash for easy replacement of existing products.

Toshiba said it plans to expand the BENAND lineup to include 24nm process NAND flash memory products after summer 2012.

Product Number Capacity I/O Voltage Package Mass
production
TC58BVG2S0FTA00 4Gbit x8 2.7 to 3.6 48pin TSOP March 2012
TC58BYG2S0FTA00 1.7 to 1.95 48pin TSOP
TC58BVG2S0FBAI4 2.7 to 3.6 63ball FBGA
TC58BYG2S0FBAI4 1.7 to 1.95 63ball FBGA
TC58BVG2S5FBAI4 x16 2.7 to 3.6 63ball FBGA
TC58BYG2S5FBAI4 1.7 to 1.95 63ball FBGA
TH58BVG3S0FTA00 8Gbit x8 2.7 to 3.6 48pin TSOP 2Q / 2012
TH58BYG3S0FTA00 1.7 to 1.95 48pin TSOP