Date: 02/01/2012

Elpida samples 4Gb DDR3 mobile DRAM

Elpida Memory, Inc. has begun sample shipments of 4-gigabit Wide IO Mobile RAM and 4-gigabit DDR3 Mobile RAM (LPDDR3). Elpida plans to begin volume production in 2012. Also, both chips will be used to develop two-layer 8-gigabit and four-layer 16-gigabit high-density packages for addition to the company's product line-up.

Elpida says the Wide IO Mobile RAM expands the I/O width by using x512-bit, a data width that is more than 10 times larger than the width for existing DRAMs, which enables a data transfer rate of 12.8 gigabytes per second (GB/s) per chip while operating at a low speed of 200MHz. The reduced DRAM speed results in approximately 50% less power consumption compared with DDR2 Mobile RAM (LPDDR2), currently the leading DRAM choice for mobile devices, configured at the same transfer rate, as per Elpida.

A single LPDDR3 has a data transfer rate of 6.4 GB/s or 12.8GB/s based on a two-chip configuration for high-end mobile devices. When compared with LPDDR2 on an identical speed basis, LPDDR3 consumes roughly 25% less power, enabling it to extend the operating time of smartphones and tablet devices.

Key Features:
4-gigabit Wide IO Mobile RAM:
Manufacturing process 30nm CMOS
Memory density 4-gigabit / 8-gigabit / 16-gigabit
Data width x512-bit
Per pin data transfer rate 200Mbps (Max.)
Supply voltage VDD1: 1.8V, VDD2/VDDQ: 1.2V
Operating case temperature range -25 to 85°C

4-gigabit DDR3 Mobile RAM:
Manufacturing process 30nm CMOS
Memory density 4-gigabit / 8-gigabit / 16-gigabit
Package FBGA / PoP (Package on Package)
Data width x32-bit / x64-bit
Per pin data transfer rate 1600Mbps (Max.)
Supply voltage VDD1: 1.8V, VDD2/VDDCA/VDDQ: 1.2V
Operating temperature range -30 to 85°C