Date: 23/09/2011

1200 V IGBTs for induction heating and resonant switching apps

International Rectifier has introduced a pair of new 1200 V Trench Insulated Gate Bipolar Transistors (IGBTs) optimized for induction heating and resonant switching applications such as welding and high power rectification.

IR explains that 1200 V IGBTs utilize its thin-wafer trench technology to provide performance benefits such as low VCE (on), ultra-fast switching to reduce power dissipation, to achieve higher power density, and also features a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.

"With their rugged reliability, and higher power density and efficiency, IR's new 1200 V IGBTs are ideally suited to induction heating and resonant applications," said Llewellyn Vaughan-Edmunds, IGBT product marketing manager, IR's Energy Saving Products Business Unit.

Specifications Part Number Package BV I(nom) Vceon Rth(j-c) Type
IRG7PH35UD1 TO247 - Copack 1200 20 1.9 0.70 oC/W Ultrafast
IRG7PH42UD1 TO247 - Copack 1200 30 1.7 0.39 oC/W Ultrafast




Availability and Pricing: Pricing begins at US $2.76 each for the IRG7PH35UD1PbF and US $3.98 each for the IRG7PH42UD1-EP in 10,000-unit quantities. Production quantities are available immediately. Prices are subject to change.